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  jiangsu changjiang electr onics technology co., ltd sod-323 plastic-encapsulate diodes BZT52C5V1HS zene r diode feature z planar die construction z general purpose, medium current z ideally suited for automat ed assembly processes z available in lead free ve rsion marking: h8 maximum ratings(operating temperature range applies unless otherwise specified) symbol parameter value unit p d power dissipation(note 1) 500 mw r ja thermal resistance from junction to ambient 250 /w t j operating junction temperature 150 t stg storage temperature range -55~+150 electrical characteristics(t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit zener voltage range (note 2) v z i zt =5ma 5.1 5.5 v z zt i zt =5ma 50 maximum zener impedance(note 3) z zk i zk =1ma 450 ? v r =2v 2 a maximum reverse current (note 2) i r v r =4.2v 50 a forward voltage (note 2) v f i f = 10ma 0.9 v 2.short duration test pulse used to minimize self-heating effect. 3. f=1kh z sod-323 a,jul,2012 www.cj-elec.com 1 application z mobile phone notes: 1. device mounted on a 1 in . ceramic pcb which spread 2 ounces of copper. 2 b,mar,2016
                                              )ruz dug&kdudfwhulvwlfv )2 5: $5'92/7$*(9 )  p9 )25:$5'&855(17, )  p$ 7 d    7 d       3r z hu'hudwlqj&xuyh 32 :(5',66,3$7 ,2 1    $0%,(17 7 (03(5$785(7 d   7 d   i 0+] &d s dflwdqfh&kdudfwhulvwlfv     5(9(56(92/7 $* (9 5  9 &$3$&,7$1&(%(7 :((17 (50,1$/6 & 7  s) 7 d    7 d    5h y huvh&kdudfwhulvwlfv 5(9(56(92/7 $* (9 =  9 5(9(56(&855(17, =  p$  (/(&75,&$/&+$5$&7(5,67,&6 a,jul,201 2 zzzfmhohffrp    b,mar,2016
62'3dfndjh2xwolqh'lphqvlrqv 62' 6xjjhvwhg3dg/d\ rxw  zzzfmhohffrp   b,mar,2016
62'7dsh dqg5hho zzzfmhohffrp   b,mar,2016


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